III-nitride avalanche photodiodes

Ryan McClintock; Jose L. Pau; Can Bayram; Bruno Fain; Paul Giedraitis; Manijeh Razeghi; Melville P. Ulmer

doi:10.1117/12.809704

26 January 2009 III-nitride avalanche photodiodes

Ryan McClintock, Jose L. Pau, Can Bayram, Bruno Fain, Paul Giedraitis, Manijeh Razeghi, Melville P. Ulmer

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220U (2009) https://doi.org/10.1117/12.809704
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Research into avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing photodetectors to utilize low-noise impact ionization based gain, GaN APDs operating in Geiger mode can deliver gains exceeding 1×10⁷. Thus with careful design, it becomes possible to count photons at the single photon level. In this paper we review the current state of the art in III-Nitride visible-blind APDs, and present our latest results regarding linear and Geiger mode III-Nitride based APDs. This includes novel device designs such as separate absorption and multiplication APDs (SAM-APDs). We also discuss control of the material quality and the critical issue of p-type doping - demonstrating a novel delta-doping technique for improved material quality and enhanced electric field confinement. The spectral response and Geiger-mode photon counting performance of these devices are then analyzed under low photon fluxes, with single photon detection capabilities being demonstrated. Other major technical issues associated with the realization of high-quality visible-blind Geiger mode APDs are also discussed in detail and future prospects for improving upon the performance of these devices are outlined.

Citation Download Citation

Ryan McClintock, Jose L. Pau, Can Bayram, Bruno Fain, Paul Giedraitis, Manijeh Razeghi, and Melville P. Ulmer "III-nitride avalanche photodiodes", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220U (26 January 2009); https://doi.org/10.1117/12.809704

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