Paper
3 February 2009 Recent progress in interband cascade lasers with separate confinement layers
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Abstract
Interband cascade lasers are efficient and compact semiconductor mid-infrared (3-6 μm) light sources with low-power consumptions. We report our recent progress in the development of interband cascade lasers with separate confinement layers. Broad-area (0.1mmx1mm) lasers have been operated in cw mode at temperatures up to 213K near 3.36 μm. For narrow ridge-waveguide (0.01mmx1.5mm) lasers, cw operation has been achieved at temperatures up to 266K near 3.43 μm, 260K near 3.7 μm, and 238K near 4.04 μm. The results on both broad-area and narrow-ridge IC lasers are discussed in comparison with previous regular IC lasers without separate confinement layers.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rui Q. Yang, Zhaobing Tian, Robert T. Hinkey, Fanghai Zhao, Kamjou Mansour, Cory J. Hill, and Yueming Qiu "Recent progress in interband cascade lasers with separate confinement layers", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300S (3 February 2009); https://doi.org/10.1117/12.807595
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Cited by 5 scholarly publications.
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KEYWORDS
Continuous wave operation

Waveguides

Quantum cascade lasers

Semiconducting wafers

Waveguide lasers

Semiconductor lasers

Laser damage threshold

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