Paper
19 March 2009 Characterization of a 0.25NA full-field EUV exposure tool
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Abstract
The performance of a 0.25NA full-field EUV exposure tool is characterized in terms of CD uniformity, focus and overlay control, as well as dose uniformity. In addition to the characterization of the scanner, we explore the use of scatterometry techniques for the measurements of extremely fine resolution features, with critical dimensions below 40 nm. The stability of the scanner performance over an extended period of time is assessed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg Kritsun, Bruno La Fontaine, Yudong Hao, Jie Li, Obert Wood, Sudharshanan Raghunathan, Tim Brunner, Chiew-Seng Koay, and Hiroyuki Mizuno "Characterization of a 0.25NA full-field EUV exposure tool", Proc. SPIE 7271, Alternative Lithographic Technologies, 727121 (19 March 2009); https://doi.org/10.1117/12.816545
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Cited by 2 scholarly publications.
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KEYWORDS
Critical dimension metrology

Semiconducting wafers

Extreme ultraviolet lithography

Scanners

Scatterometry

Extreme ultraviolet

Reticles

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