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We have evaluated selective doping techniques for the fabrication of type II LWIR superlattice planar
detectors. Ion-implantation and diffusion of dopants were evaluated for selective doping of the electrical
junction region in planar photodiodes. Residual damage remains when superlattice structures are implanted
with Te ions with an energy of 190 keV and a dose of 5x1013 cm-2, at room temperature. Controlled Zn
diffusion profiles with concentrations from 5x1016 to > 5x1018 cm-3 in the wide bandgap cap layer was
achieved through a vapor phase diffusion technique. Planar p-on-n diodes were fabricated using selective
Zn diffusion. The I-V characteristics were leaky due to G-R and tunneling in the homojunction devices, for
which no attempts were made to optimize the n-type absorber doping level. Work is underway for the
implementation of planar diodes with the n-on-p architecture through selective Te diffusion. Due to
increased minority carrier lifetimes for p-type InAs/GaSb superlattice absorber layers, planar device with
the n-on-p architecture have the potential to provide improved performance as compared to the p-on-n
counterparts.
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