Single-layer SiGe infrared wide-band microemitter arrays by MEMS technology

V. K. Malyutenko; O. Yu. Malyutenko; V. Leonov; C. Van Hoof

doi:10.1117/12.818482

11 May 2009 Single-layer SiGe infrared wide-band microemitter arrays by MEMS technology

V. K. Malyutenko, O. Yu. Malyutenko, V. Leonov, C. Van Hoof

Proceedings Volume 7318, Micro- and Nanotechnology Sensors, Systems, and Applications; 73181F (2009) https://doi.org/10.1117/12.818482
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Although thermal IR microemitters making use of Honeywell planar technology remain the devices of choice for the last decade, a significant disadvantage of these devices is their two-level structure, which results in low fill-factor and causes mechanical and thermal stresses between the layers. In this paper, the technology for single-level polycrystalline SiGe thermal microemitters, their design, and performance characteristics are presented. The 128-element linear arrays with a fill-factor of 88 % and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60 × 60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate time response of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The SiGe device application to the infrared dynamic scene simulation and critical factors that aid their competitiveness over conventional planar two-level design are discussed.

Citation Download Citation

V. K. Malyutenko, O. Yu. Malyutenko, V. Leonov, and C. Van Hoof "Single-layer SiGe infrared wide-band microemitter arrays by MEMS technology", Proc. SPIE 7318, Micro- and Nanotechnology Sensors, Systems, and Applications, 73181F (11 May 2009); https://doi.org/10.1117/12.818482

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