Etching effects on machined surface characteristics of single crystal Si

Shahjada A. Pahlovy; Iwao Miyamoto; Motoyuki Nishimura; Junki Kawamura

doi:10.1117/12.839251

25 August 2009 Etching effects on machined surface characteristics of single crystal Si

Shahjada A. Pahlovy, Iwao Miyamoto, Motoyuki Nishimura, Junki Kawamura

Proceedings Volume 7375, ICEM 2008: International Conference on Experimental Mechanics 2008; 73753C (2009) https://doi.org/10.1117/12.839251
Event: International Conference on Experimental Mechanics 2008 and Seventh Asian Conference on Experimental Mechanics, 2008, Nanjing, China

Abstract

This paper demonstrates the wet etching effects on machined surface of single crystal Si. The machined surface was prepared by irradiating sample with low energy (~ 2keV) ECR sourced Ar⁺ ion beam. Then we performed etching process by HF(2.4%) at 20min,40min and 60min respectively. We analyzed surface of sample (before and after etching) by AFM and white light interferometer to measure surface roughness and machined depth. Finally we compared the etching effects on machining depth and surface roughness and result shows HF etching has remarkable effect i.e. increases both machining depth and surface roughness. Result also confirmed that etching effect can be controlled by etching time.

Citation Download Citation

Shahjada A. Pahlovy, Iwao Miyamoto, Motoyuki Nishimura, and Junki Kawamura "Etching effects on machined surface characteristics of single crystal Si", Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73753C (25 August 2009); https://doi.org/10.1117/12.839251

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