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11 May 2009 Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance
Burn J. Lin
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737902 (2009) https://doi.org/10.1117/12.824243
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Cost and imaging are becoming big concerns in lithographic patterning of 32-nm half pitch and beyond, affecting the choice of lithographic patterning tools and the corresponding mask technology. In this paper, the cost and imaging aspects of ArF immersion double patterning, multiple e-beam maskless lithography, and extreme-uv lithography are discussed with proposals to make the cost acceptable. The impacts of these technologies to the masking industry are quite different. They are also given here. Some comments are made on nano-imprint lithography.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Burn J. Lin "Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737902 (11 May 2009); https://doi.org/10.1117/12.824243
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KEYWORDS
Photomasks
Extreme ultraviolet lithography
Scanners
Extreme ultraviolet
Lithography
Double patterning technology
Semiconducting wafers
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