Paper
5 August 2009 The fabrication of a 128×128 solar-blind AlGaN p-i-n back-illuminated ultraviolet photodetector array
Tingjing Yan, Ming Chong, Degang Zhao, Shuang Zhang, Lianghui Chen
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Abstract
128×128 pixels AlGaN solar blind ultraviolet photodetector arrays have been designed and fabricated. The diameter of each pixel is 44μm with a 50μm pitch. They are photosensitive in the waveband of 225~255nm, with the peak sensitivity at 246nm. The back-illuminated p-i-n heterojunction structure has been grown on transparent sapphire substrate using MOCVD, the aluminum composition of AlxGa1-xN n-type window layer was 71%, and the alloy composition of the unintentionally doped (UID) absorber layer was 52%. The dark current measured at a bias voltage close to zero is 27 pA, and the photocurrent is 2.7 nA at the incidence optical power of 0.12 mW in a wavelength of 246 nm, corresponding to a peak responsivity of 23mA/W.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tingjing Yan, Ming Chong, Degang Zhao, Shuang Zhang, and Lianghui Chen "The fabrication of a 128×128 solar-blind AlGaN p-i-n back-illuminated ultraviolet photodetector array", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73831Q (5 August 2009); https://doi.org/10.1117/12.835502
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KEYWORDS
Ultraviolet radiation

Photodetectors

Back illuminated sensors

Staring arrays

Sensors

Gallium nitride

Metalorganic chemical vapor deposition

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