Critically coupled surface phonon-polariton excitation in silicon carbide

Burton Neuner III; Dmitriy Korobkin; Chris Fietz; Davy Carole; Gabriel Ferro; Gennady Shvets

doi:10.1117/12.825403

2 September 2009 Critically coupled surface phonon-polariton excitation in silicon carbide

Burton Neuner III, Dmitriy Korobkin, Chris Fietz, Davy Carole, Gabriel Ferro, Gennady Shvets

Proceedings Volume 7394, Plasmonics: Metallic Nanostructures and Their Optical Properties VII; 73942B (2009) https://doi.org/10.1117/12.825403
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-infrared radiation. Reflectance measurements demonstrate critical coupling by a double-scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.

Citation Download Citation

Burton Neuner III, Dmitriy Korobkin, Chris Fietz, Davy Carole, Gabriel Ferro, and Gennady Shvets "Critically coupled surface phonon-polariton excitation in silicon carbide", Proc. SPIE 7394, Plasmonics: Metallic Nanostructures and Their Optical Properties VII, 73942B (2 September 2009); https://doi.org/10.1117/12.825403

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