Paper
21 August 2009 Micro optical spatial and spectral elements (MOSSE)
Author Affiliations +
Abstract
Interference transmission filters that have a defect layer incorporated photonic crystal structure provide a narrow transmission notch within a wide stop band. The location and width of transmission notch can be tuned by changing the thickness of the defect layer. In this paper, we propose and implement interference filters with defect layers patterned with diffractive optical elements. The spectral transmission is a function of the local defect layer thickness while the spatial transmission follows contours of equal optical thickness. The novel devices have multiplexed spectral and spatial transmission characteristics. Alternating layers of silicon oxide (SiOx) and silicon nitride (SixNy) were grown onto a clean silicon substrate using plasma enhanced chemical vapor deposition (PECVD). A thick defect layer of SiOx was grown and the wafer was removed from the growth chamber. The wafer was then patterned with charge 2, 8-level vortex structures on a GCA 6300 g-line stepper tool. The devices were interrogated with a collimated beam from a tunable laser source that operates from 1520 nm to 1630 nm. The spectral transmission was measured by separately illuminating each level of diffractive element and the spatial transmission was imaged on to a CCD camera. Spectral transmission peaks whose location varies as a function of level height were obtained. The spatial transmission profiles consist of triangular zones with wavelength dependent orientation. The elements have potential applications in hyper spectral imaging, pupil filtering, and engineered illumination systems.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pradeep Srinivasan, Yigit O. Yilmaz, and Eric G. Johnson "Micro optical spatial and spectral elements (MOSSE)", Proc. SPIE 7420, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III, 74200G (21 August 2009); https://doi.org/10.1117/12.826060
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KEYWORDS
Silicon

Oxides

Photoresist materials

Optical filters

Semiconducting wafers

Chemical elements

Etching

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