Preparation of electrodes for molecular transistor by focused ion beam

I. V. Sapkov; V. V. Kolesov; E. S. Soldatov

doi:10.1117/12.854016

26 February 2010 Preparation of electrodes for molecular transistor by focused ion beam

I. V. Sapkov, V. V. Kolesov, E. S. Soldatov

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752110 (2010) https://doi.org/10.1117/12.854016
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

Blank-chips for molecular transistor were created using milling technology with focused ion beam. Optimal parameters for milling of metal electrodes were found, so it is possible to create a 30 nm gaps suitable for production of system with suspended electrodes. Electrical measurements of a gap show reliable cutting of a metal film. In situ production of simple nanostructures of various shapes potentially useful for quantum devices was demonstrated.

Citation Download Citation

I. V. Sapkov, V. V. Kolesov, and E. S. Soldatov "Preparation of electrodes for molecular transistor by focused ion beam", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752110 (26 February 2010); https://doi.org/10.1117/12.854016

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