Paper
16 March 2010 Output power enhancement of light-emitting diodes with defect passivation layer
Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, Che-Ming Liu
Author Affiliations +
Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021X (2010) https://doi.org/10.1117/12.841513
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ~4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, and Che-Ming Liu "Output power enhancement of light-emitting diodes with defect passivation layer", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021X (16 March 2010); https://doi.org/10.1117/12.841513
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Silica

Light emitting diodes

Gallium nitride

Optical lithography

Scanning electron microscopy

Transmission electron microscopy

Back to Top