Growth and characterization of ZnO-based buffer layers for CIGS solar cells

T. Törndahl; A. Hultqvist; C. Platzer-Björkman; M. Edoff

doi:10.1117/12.846351

15 February 2010 Growth and characterization of ZnO-based buffer layers for CIGS solar cells

T. Törndahl, A. Hultqvist, C. Platzer-Björkman, M. Edoff

Proceedings Volume 7603, Oxide-based Materials and Devices; 76030D (2010) https://doi.org/10.1117/12.846351
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

ZnO-based compounds are of interest as buffer layers in Cu(In,Ga)Se₂ (CIGS) solar cells, due to the ability to change the electrical and optical properties of ZnO by addition of other elements. The device structure of a CIGS solar cell is; soda-lime glass/Mo/CIGS/buffer layer/ZnO/ZnO:Al. This contribution treats growth and characterization of Zn_1-xMg_xO and Zn(O,S) on glass substrates and as buffer layers in CIGS solar cell devices. The ZnO-based compounds are grown by atomic layer deposition at deposition temperatures below 200 °C using metal-organic precursors.

Citation Download Citation

T. Törndahl, A. Hultqvist, C. Platzer-Björkman, and M. Edoff "Growth and characterization of ZnO-based buffer layers for CIGS solar cells", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030D (15 February 2010); https://doi.org/10.1117/12.846351

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available