Atomic layer epitaxy of ZnO and TiO2 thin films on c-plane sapphire substrate for novel oxide soft x-ray mirrors

Masaki Murata; Yuji Tanaka; Hiroshi Kumagai; Tsutomu Shinagawa; Ataru Kobayashi

doi:10.1117/12.840834

15 February 2010 Atomic layer epitaxy of ZnO and TiO₂ thin films on c-plane sapphire substrate for novel oxide soft x-ray mirrors

Masaki Murata, Yuji Tanaka, Hiroshi Kumagai, Tsutomu Shinagawa, Ataru Kobayashi

Author Affiliations +

Proceedings Volume 7603, Oxide-based Materials and Devices; 76030R (2010) https://doi.org/10.1117/12.840834
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Atomic layer epitaxy of zizc oxide (ZnO) and titanium dioxide (TiO₂) have been applied to compose superlattice film devices such as soft x-ray multilayers. The reason why oxide films are chosen, is that oxygen of oxide films has transparency for the "water-window" (λ=2.332-4.368 nm) wavelengths. Actually, we researched the fabrication of TiO₂/ZnO multilayer mirrors and then found that these multilayer films provided high reflection in the wavelength region. Our theoretical calculation indicated that multilayer mirror could have the high reflectance of nearly 50% at the wavelength of 2.73 nm and at the incidence angle of 18.2° from the normal incidence. TiO₂/ZnO films were grown on the c-plane (0001) sapphire substrate by means of atomic layer epitaxy (ALE) technique, which involved the alternate reactions of Zn(CH₂CH₃)₂ (DEZ) and H₂O, and Ti(Cl)₄ (TCT) and H₂O. Our experimental results indicated that thin Wurtzite ZnO (0001) and Rutile TiO₂(200) films were grown epitaxially on c-plane (0001) sapphire substrates at 450°C with self-limiting mechanism. The 10-bilayer TiO₂/ZnO multilayer indicated high soft X-ray reflectivity of around 30%.

Citation Download Citation

Masaki Murata, Yuji Tanaka, Hiroshi Kumagai, Tsutomu Shinagawa, and Ataru Kobayashi "Atomic layer epitaxy of ZnO and TiO₂ thin films on c-plane sapphire substrate for novel oxide soft x-ray mirrors", Proc. SPIE 7603, Oxide-based Materials and Devices, 76030R (15 February 2010); https://doi.org/10.1117/12.840834

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