Scanner qualification with IntenCD based reticle error correction

Yair Elblinger; Jo Finders; Marcel Demarteau; Onno Wismans; Ingrid Minnaert Janssen; Frank Duray; Michael Ben Yishai; Shmoolik Mangan; Yaron Cohen; Ziv Parizat; Shay Attal; Netanel Polonsky; Ilan Englard

doi:10.1117/12.848334

1 April 2010 Scanner qualification with IntenCD based reticle error correction

Yair Elblinger, Jo Finders, Marcel Demarteau, Onno Wismans, Ingrid Minnaert Janssen, Frank Duray, Michael Ben Yishai, Shmoolik Mangan, Yaron Cohen, Ziv Parizat, Shay Attal, Netanel Polonsky, Ilan Englard

Author Affiliations +

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 763835 (2010) https://doi.org/10.1117/12.848334
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the cycle time for pre and post production-start activities. If done effectively, the matrices of base line performance established during the SAT are used as a reference for scanner performance and fleet matching monitoring and maintenance in the fab environment. Key elements which can influence the cycle time of the SAT, FAT and maintenance cycles are the imaging, process and mask characterizations involved with those cycles. Discrete mask measurement techniques are currently in use to create across-mask CDU maps. By subtracting these maps from their final wafer measurement CDU map counterparts, it is possible to assess the real scanner induced printed errors within certain limitations. The current discrete measurement methods are time consuming and some techniques also overlook mask based effects other than line width variations, such as transmission and phase variations, all of which influence the final printed CD variability. Applied Materials Aera2^TM mask inspection tool with IntenCD^TM technology can scan the mask at high speed, offer full mask coverage and accurate assessment of all masks induced source of errors simultaneously, making it beneficial for scanner qualifications and performance monitoring. In this paper we report on a study that was done to improve a scanner introduction and qualification process using the IntenCD application to map the mask induced CD non uniformity. We will present the results of six scanners in production and discuss the benefits of the new method.

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Yair Elblinger, Jo Finders, Marcel Demarteau, Onno Wismans, Ingrid Minnaert Janssen, Frank Duray, Michael Ben Yishai, Shmoolik Mangan, Yaron Cohen, Ziv Parizat, Shay Attal, Netanel Polonsky, and Ilan Englard "Scanner qualification with IntenCD based reticle error correction", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763835 (1 April 2010); https://doi.org/10.1117/12.848334

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KEYWORDS

Photomasks

Scanners

Critical dimension metrology

Reticles

Semiconducting wafers

Scanning electron microscopy

Airborne remote sensing

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