Investigation of DBR used in HB-LED

Zhi-Quan Li; Ya-Nan Wang; Xiao-Gang Wu; Yue Gu

doi:10.1117/12.865511

22 October 2010 Investigation of DBR used in HB-LED

Zhi-Quan Li, Ya-Nan Wang, Xiao-Gang Wu, Yue Gu

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76581A (2010) https://doi.org/10.1117/12.865511
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

The high brightness InGaAlP light emitting diodes(LED) is a novel solid-state lighting in recent years. As the absorption of the red light by the GaAs substrates decreased external quantum efficiency, the development and application of LED are limited. If all the light incident to the substrate can be reflected, the influences of substrate absorption are radically improved. Therefore, a novel distributed Bragg reflector(DBR) is proposed. The defect layer whose crystal lattice constant matched with the substrate grows among the DBR to change the reflectivity spetrum by regulating the defect layer meterial and thickness. According to matrices-optic theoretics, analogically compute the reflectivity and transmission spectrum of Al_0.5Ga_0.5As/AlAs DBR in which has defect layer, corresponding to the wavelength is 610nm and period is 15. The experimental results show that the reflectivity is not less than 0.6 as the incident angle is greater than 45°. Hence, a novel method is obtained for enhancing the LED external quantum efficiency.

Citation Download Citation

Zhi-Quan Li, Ya-Nan Wang, Xiao-Gang Wu, and Yue Gu "Investigation of DBR used in HB-LED", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581A (22 October 2010); https://doi.org/10.1117/12.865511

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