Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystalline diamond dielectric/CMOS devices

O. Auciello; A. V. Sumant; C. Goldsmith; S. O'Brien; S. Sampath; C. Gudeman; W. Wang; J. C. M. Hwang; J. Swonger; J. A. Carlisle; S. Balachandran; D. C. Mancini

doi:10.1117/12.851491

5 May 2010 Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystalline diamond dielectric/CMOS devices

O. Auciello, A. V. Sumant, C. Goldsmith, S. O'Brien, S. Sampath, C. Gudeman, W. Wang, J. C. M. Hwang, J. Swonger, J. A. Carlisle, S. Balachandran, D. C. Mancini

Author Affiliations +

Proceedings Volume 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II; 76791K (2010) https://doi.org/10.1117/12.851491
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

Most current capacitive RF-MEMS switch technology is based on conventional dielectric materials such as SiO₂ and Si₃N₄. However, they suffer not only from charging problems but also stiction problems leading to premature failure of an RF-MEMS switch. Ultrananocrystalline diamond (UNCD^(R) (2-5 nm grains) and nanocrystalline diamond (NCD) (10- 100 nm grains) films exhibit one of the highest Young's modulus (~ 980-1100 GPa) and demonstrated MEMS resonators with the highest quality factor (Q ≥10,000 in air for NCD) today, they also exhibit the lowest force of adhesion among MEMS/NEMS materials (~10 mJ/m²-close to van der Waals' attractive force for UNCD) demonstrated today. Finally, UNCD exhibits dielectric properties (fast discharge) superior to those of Si and SiO₂, as shown in this paper. Thus, UNCD and NCD films provide promising platform materials beyond Si for a new generation of important classes of high-performance MEMS/NEMS devices.

Citation Download Citation

O. Auciello, A. V. Sumant, C. Goldsmith, S. O'Brien, S. Sampath, C. Gudeman, W. Wang, J. C. M. Hwang, J. Swonger, J. A. Carlisle, S. Balachandran, and D. C. Mancini "Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystalline diamond dielectric/CMOS devices", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76791K (5 May 2010); https://doi.org/10.1117/12.851491

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available