New narrow resonance in the fluorescence of closed optical transition observed in nanometric Cs-vapor layers

S. Cartaleva; A. Sargsyan; D. Sarkisyan; D. Slavov; K. Vaseva

doi:10.1117/12.885689

17 January 2011 New narrow resonance in the fluorescence of closed optical transition observed in nanometric Cs-vapor layers

S. Cartaleva, A. Sargsyan, D. Sarkisyan, D. Slavov, K. Vaseva

Author Affiliations +

Proceedings Volume 7747, 16th International School on Quantum Electronics: Laser Physics and Applications; 77470H (2011) https://doi.org/10.1117/12.885689
Event: XVI International School on Quantum Electronics: Laser Physics and Applications, 2010, Nessebar, Bulgaria

Abstract

In this communication we report the first observation of a narrow, reduced fluorescence dip in the profile of the completely closed transition on the D₂ line of ¹³³Cs vapor, confined in Extremely Thin Cell with nanometric thickness. The theoretical modeling of the fluorescence based on the Optical Bloch Equation for two-level atomic system, shows that the narrow dip in the fluorescence could be attributed to a very small loss in the excitation process of the examined degenerate transition. While the population in the atomic system remains constant, the depolarization of the excited level can lead to some loss in the efficiency of the optical transition excitation. Under the conditions of our experiment, no dip in the fluorescence is registered for the cell thickness where a well pronounced Dicke peak in the absorption takes place. For the cells with nanometric thickness, the previous investigations demonstrate that the fluorescence profiles of optical transitions differ significantly from the absorption profiles. However, our experiment shows that some traces of the coherent Dicke process contributing to the absorption line still remain in the fluorescence, which is result of non-coherent processes.

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S. Cartaleva, A. Sargsyan, D. Sarkisyan, D. Slavov, and K. Vaseva "New narrow resonance in the fluorescence of closed optical transition observed in nanometric Cs-vapor layers", Proc. SPIE 7747, 16th International School on Quantum Electronics: Laser Physics and Applications, 77470H (17 January 2011); https://doi.org/10.1117/12.885689

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