Inspecting EUV mask blanks with a 193-nm system

Joshua Glasser; Stan Stokowski; Gregg Inderhees

doi:10.1117/12.865490

26 May 2010 Inspecting EUV mask blanks with a 193-nm system

Joshua Glasser, Stan Stokowski, Gregg Inderhees

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774808 (2010) https://doi.org/10.1117/12.865490
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

Data and simulation results characterizing the capability of a DUV system to inspect EUV mask blanks and substrates are reported. Phase defects and particles on multilayer (ML) surfaces, ARC-coated absorber, and substrate material are considered. Phase defects on a quartz substrate surface are shown. The principle of phase detection is described. Results demonstrating the Teron 600's readiness for meeting 32nm hp requirements for bump / pit phase defect detection are shown. Simulations show that the 22-nm node requirement for phase defect detection should be met, assuming a reduction in the multilayer roughness. Preliminary data on the sensitivity of SiO₂ sphere detection on ML and quartz are reported. Simulation results show relative sensitivities for detecting SiO₂ spheres of different diameters on various EUV materials.

Citation Download Citation

Joshua Glasser, Stan Stokowski, and Gregg Inderhees "Inspecting EUV mask blanks with a 193-nm system", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774808 (26 May 2010); https://doi.org/10.1117/12.865490

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