Paper
27 August 2010 Terahertz nonlinear spectroscopy of free-carriers in direct bandgap semiconductors
L. Razzari, F. Blanchard, F. H. Su, G. Sharma, A. Ayesheshim, T. L. Cocker, L. V. Titova, H.-C. Bandulet, R. Morandotti, J.-C. Kieffer, T. Ozaki, M. Reid, F. A. Hegmann
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Abstract
Nonlinear dynamics of free-carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using intense few-cycle pulses. Techniques as Z-scan, THz-pump / THz-probe, and optical-pump/ THz-probe are employed to explore nonlinear interactions in both n-doped and photoexcited systems. The physical mechanism that gives rise to such interactions is found to be intervalley scattering.
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L. Razzari, F. Blanchard, F. H. Su, G. Sharma, A. Ayesheshim, T. L. Cocker, L. V. Titova, H.-C. Bandulet, R. Morandotti, J.-C. Kieffer, T. Ozaki, M. Reid, and F. A. Hegmann "Terahertz nonlinear spectroscopy of free-carriers in direct bandgap semiconductors", Proc. SPIE 7763, Terahertz Emitters, Receivers, and Applications, 77630B (27 August 2010); https://doi.org/10.1117/12.858332
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KEYWORDS
Terahertz radiation

Scattering

Semiconductors

Crystals

Electrons

Gallium arsenide

Polarization

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