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We discuss the present state-of-the-art concerning the growth mechanism, optical luminescence and electrical
properties for GaN nanowires grown with catalyst-free molecular beam epitaxy. These nanowires are essentially
defect-free and display long photoluminescence lifetimes and carrier mobilities relative to epitaxially grown GaN
films. The exclusion of crystalline defects comes from the ease with which strain-relieving dislocations can reach
the sidewalls and terminate. The growth mechanism is based on variations in Ga sticking coefficients and surface
energies of the sidewall planes and end facet planes. With control of the nucleation process through selective
epitaxy on patterned substrates, a high degree of diameter, length and position control can be achieved. Common
difficulties with interpretation of optical and electrical data with regard to internal quantum efficiency and mobility
are also addressed.
Krist A. Bertness,Norman A. Sanford, andJohn B Schlager
"Catalyst-free GaN nanowire growth and optoelectronic characterization", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 776802 (27 August 2010); https://doi.org/10.1117/12.859950
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Krist A. Bertness, Norman A. Sanford, John B Schlager, "Catalyst-free GaN nanowire growth and optoelectronic characterization," Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 776802 (27 August 2010); https://doi.org/10.1117/12.859950