Paper
24 August 2010 Influence of point defects on the performance of InVO4 photoanodes
Roel Van de Krol, Julie Ségalini, Cristina S. Enache
Author Affiliations +
Abstract
The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 - 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence of deep donor states at ~0.7 eV below the conduction band. Shallow donors are absent in this material, in contrast to what is normally observed for metal oxides. The deep donor model explains the much stronger visible light absorption of powders compared to thin films, and is supported by photoluminescence data. The origin of the deep donors is attributed to deviations in the In:V ratio, and the corresponding defect-chemical reactions will be discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roel Van de Krol, Julie Ségalini, and Cristina S. Enache "Influence of point defects on the performance of InVO4 photoanodes", Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700S (24 August 2010); https://doi.org/10.1117/12.860463
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Absorption

Oxides

Visible radiation

Luminescence

Thin films

Hydrogen

Indium

Back to Top