LIDT of HfO2/SiO2 HR films by different test modes at 1064nm and 532nm

Bin Ma; Tao Ding; Hongfei Jiao; Gang Zhou; Zhengxiang Shen; Xinbin Cheng; Jinlong Zhang; Huasong Liu; Yiqin Ji; Pengfei He; Zhanshan Wang

doi:10.1117/12.867226

2 December 2010 LIDT of HfO₂/SiO₂ HR films by different test modes at 1064nm and 532nm

Bin Ma, Tao Ding, Hongfei Jiao, Gang Zhou, Zhengxiang Shen, Xinbin Cheng, Jinlong Zhang, Huasong Liu, Yiqin Ji, Pengfei He, Zhanshan Wang

Author Affiliations +

Proceedings Volume 7842, Laser-Induced Damage in Optical Materials: 2010; 78420E (2010) https://doi.org/10.1117/12.867226
Event: Laser Damage Symposium XLII: Annual Symposium on Optical Materials for High Power Lasers, 2010, Boulder, Colorado, United States

Abstract

In order to evaluate the laser induced damage threshold (LIDT) of our HfO₂/SiO₂ high reflectance films prepared by reactive electron beam evaporation process at 1064nm and 532nm, the four popular test methods are performed according to the ISO 11254 and other relevant standards. The improvement of laser conditioning effect and influence of cumulative effect have been studied and estimated during the tests by comparing the deviations of the thresholds along the damage probability curves and relationship between the thresholds and the pulses number. Moreover, the details are carefully inspected during raster scan especially at 1064nm with all the >2μm nodules and damage sites marking and recording, then the ejection probability and growth rate of nodules are given. Note that attention should be paid to the submicron absorbing particulates at 532nm which are probable to trigger the damage.

Citation Download Citation

Bin Ma, Tao Ding, Hongfei Jiao, Gang Zhou, Zhengxiang Shen, Xinbin Cheng, Jinlong Zhang, Huasong Liu, Yiqin Ji, Pengfei He, and Zhanshan Wang "LIDT of HfO₂/SiO₂ HR films by different test modes at 1064nm and 532nm", Proc. SPIE 7842, Laser-Induced Damage in Optical Materials: 2010, 78420E (2 December 2010); https://doi.org/10.1117/12.867226

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