Numerical study on efficiency droop of blue InGaN light-emitting diodes

Yen-Kuang Kuo; Jih-Yuan Chang; Jen-De Chen

doi:10.1117/12.874849

21 February 2011 Numerical study on efficiency droop of blue InGaN light-emitting diodes

Yen-Kuang Kuo, Jih-Yuan Chang, Jen-De Chen

Proceedings Volume 7933, Physics and Simulation of Optoelectronic Devices XIX; 793317 (2011) https://doi.org/10.1117/12.874849
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

Citation Download Citation

Yen-Kuang Kuo, Jih-Yuan Chang, and Jen-De Chen "Numerical study on efficiency droop of blue InGaN light-emitting diodes", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793317 (21 February 2011); https://doi.org/10.1117/12.874849

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