Stoichiometric Property Of ZnSe/GaAs Interface Grown By MOCVD

Ikuo Suemune; Koutoku Ohmi; Takashi Kanda; Yasuo Kan; Masamichi Yamanishi

doi:10.1117/12.940999

20 April 1987 Stoichiometric Property Of ZnSe/GaAs Interface Grown By MOCVD

Ikuo Suemune, Koutoku Ohmi, Takashi Kanda, Yasuo Kan, Masamichi Yamanishi

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.940999
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Stoichiometric property of ZnSe film at GaAs interface was found to be critically dependent on the surface conditions of the GaAs substrates. It is clarified that the main factor governing the interface stoichiometry is the competition between the Zn-As bondings and the Ga-Se bondings at the interface. Especially, thin Ga-Se bonded layer at the interface is estimated to work as a barrier to diffusions of Zn or As and increases the sharpness of the heterointerface.

Citation Download Citation

Ikuo Suemune, Koutoku Ohmi, Takashi Kanda, Yasuo Kan, and Masamichi Yamanishi "Stoichiometric Property Of ZnSe/GaAs Interface Grown By MOCVD", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.940999

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available