Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT)

A. Shibatomi; Y. Yamaguchi; T. Futatsugi; S. Muto; N. Yokoyama

doi:10.1117/12.941061

22 April 1987 Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT)

A. Shibatomi, Y. Yamaguchi, T. Futatsugi, S. Muto, N. Yokoyama

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941061
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The resonant-tunneling Bipolar transistor (RBT) which has a high current gain of 20 was developed. RBTs are attracting a lot of interests as new functional and ultra high speed devices. We describe about material preparations and fabrication process technologies, and device characteristics.

Citation Download Citation

A. Shibatomi, Y. Yamaguchi, T. Futatsugi, S. Muto, and N. Yokoyama "Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT)", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941061

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available