Invited Paper Complementary HEMT Logic: Problems Of Threshold Voltage Control And Their Solutions

Kazuhiko Matsumoto

doi:10.1117/12.941058

22 April 1987 Invited Paper Complementary HEMT Logic: Problems Of Threshold Voltage Control And Their Solutions

Kazuhiko Matsumoto

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941058
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Various types of complementary HEMT logics thus far reported were compared from the point of view of the uniformity and the controllability of the threshold voltage of the FET. A selective crystal regrowth technique by MBE was developed for the complementary SISFET logic, which could grow a crystal with a smooth surface and did not affect the threshold voltage of the FET on the regrown crystal. A method how to control the flat-band voltage of GaAs SIS diode was reported, which preserve the feature of the uniformity of the flat-band voltage.

Citation Download Citation

Kazuhiko Matsumoto "Invited Paper Complementary HEMT Logic: Problems Of Threshold Voltage Control And Their Solutions", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941058

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available