Keynote Address Elemental And Compound Semiconductor Devices Today And Beyond: Influence Of Advanced Epitaxial Processes

Kang L. Wang

doi:10.1117/12.941020

22 April 1987 Keynote Address Elemental And Compound Semiconductor Devices Today And Beyond: Influence Of Advanced Epitaxial Processes

Kang L. Wang

Author Affiliations +

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941020
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

This paper attempts to describe the advances of epitaxy of elemental and compound semiconductors and their impact on new physics, effects and applications of new devices. The impact of the recent epitaxy on material research is truly revolutionary. However, the scope is too immense to cover in a limited space and time. In lieu of the detailed descriptions of the epitaxial processes, I will try to highlight the most important substances of the advance. Several examples of newly discovered effects and new devices based on the artificially structured materials that are made possible by the advanced epitaxial techniques will be presented. These examples are by no mean exclusive and many other important ones are inadvertent omitted owing to the limited space and preferential interests of the author. Finally, some on-going research efforts as well as possible directions of further development of thin film epitaxy are discussed.

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Kang L. Wang "Keynote Address Elemental And Compound Semiconductor Devices Today And Beyond: Influence Of Advanced Epitaxial Processes", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941020

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