Hall measurements on low-mobility materials and high resistivity materials

Jeffrey Lindemuth; Shin-Ichiro Mizuta

doi:10.1117/12.893100

13 September 2011 Hall measurements on low-mobility materials and high resistivity materials

Jeffrey Lindemuth, Shin-Ichiro Mizuta

Proceedings Volume 8110, Thin Film Solar Technology III; 81100I (2011) https://doi.org/10.1117/12.893100
Event: SPIE Solar Energy + Technology, 2011, San Diego, California, United States

Abstract

The Hall effect is a primary method to measure carrier density, mobility and carrier type in semiconducting materials. Many contemporary semiconductor and electronic materials being developed for green energy, efficient lighting, flexible inexpensive electronics and high power devices are characterized by very low mobilities^1,2,3. For a traditional DC field Hall system, mobilities of less than 10 cm²/(Vs) become very difficult to measure with magnetic fields on the order of 1 T. This paper examines an AC field Hall measurement methodology that allows one to measure Hall mobilities down to 0.001 cm²/(Vs)-lower than possible using traditional DC field Hall measurement techniques. The first section of this paper is a review of the DC method, followed by the introduction of the AC method. AC field measurements of microcrystalline Si and ZnO are presented.

Citation Download Citation

Jeffrey Lindemuth and Shin-Ichiro Mizuta "Hall measurements on low-mobility materials and high resistivity materials", Proc. SPIE 8110, Thin Film Solar Technology III, 81100I (13 September 2011); https://doi.org/10.1117/12.893100

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