High-quality vertical light emitting diodes fabrication by mechanical lift-off technique

Po-Min Tu; Shih-Chieh Hsu; Chun-Yen Chang

doi:10.1117/12.893237

23 September 2011 High-quality vertical light emitting diodes fabrication by mechanical lift-off technique

Po-Min Tu, Shih-Chieh Hsu, Chun-Yen Chang

Proceedings Volume 8123, Eleventh International Conference on Solid State Lighting; 81230R (2011) https://doi.org/10.1117/12.893237
Event: SPIE Optical Engineering + Applications, 2011, San Diego, California, United States

Abstract

We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×10⁹ to 1×10⁸ cm^-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.

Citation Download Citation

Po-Min Tu, Shih-Chieh Hsu, and Chun-Yen Chang "High-quality vertical light emitting diodes fabrication by mechanical lift-off technique", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230R (23 September 2011); https://doi.org/10.1117/12.893237

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