High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window

Viktor Schütz; Alexander Horn; Uwe Stute

doi:10.1117/12.907972

24 February 2012 High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window

Viktor Schütz, Alexander Horn, Uwe Stute

Author Affiliations +

Proceedings Volume 8244, Laser-based Micro- and Nanopackaging and Assembly VI; 82440X (2012) https://doi.org/10.1117/12.907972
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

The laser is an extremely suitable non-contact tool for fast and automated in-line processes for example used to improve the efficiency of solar cells. With ultra-short pulsed laser radiation it is possible to decrease the reflectivity by modifying the surface topology of silicon. For the proposed modification, the optimum process window for altering the silicon surface topology on a micrometer scale is found at small laser fluencies at finite repetition rates. A promising up scaling method is process parallelization using in parallel a multiple set of interaction zones with the optimized process characteristics for single process interaction. Based on the single process, required laser process parameters and optical parameters for parallel processing are derived theoretically in order to enable a wafer processing in standard cycle times. Exemplarily 5-inch mc-silicon solar wafers are machined using a linear 7-times diffractive optical element (DOE), and in a second step solar cells are built up to determine the efficiency gain by the laser surface modification. A preliminary absolute efficiency gain of Δη > 0.2 % is achieved.

Citation Download Citation

Viktor Schütz, Alexander Horn, and Uwe Stute "High-throughput process parallelization for laser surface modification on Si-solar cells: determination of the process window", Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 82440X (24 February 2012); https://doi.org/10.1117/12.907972

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