Paper
16 February 2012 Novel beam splitter for high-order harmonics with WO3/TiO2 bilayer grown on c-plane sapphire substrate by sequential surface chemical reactions
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Abstract
High-intensity high-order harmonics have been investigated intensively in recent years. In the development of a beam line for the high-intensity high-order harmonics, however, utilizing a conventional beam splitter (BS) (Si or SiC) that absorbs the fundamental waves has caused serious problems such as its thermal distortion. To solve these problems, we proposed and investigated a novel BS with transparent materials that transmitted the fundamental waves and then reflected the high-order harmonics. In BS for the high-order harmonics, reflection of the fundamental waves should be minimized by entering the p-polarized fundamental waves at the Brewster's angle, which could improve the separation between the fundamental waves and the high-order harmonics at the same Brewster's angle. We have already investigated and fabricated WO3/TiO2 bilayers on c-plane sapphire substrates by controlled growth with sequential surface chemical reactions (SSCR) using sequentially fast pressurized pulses of the vapor sources. Our previous experimental results revealed that WO3 (221) and rutile TiO2 (200) thin films could be grown epitaxially on c-plane sapphire substrates by SSCRs. Then, in this study, we proposed a WO3/TiO2 bilayer grown on c-plane sapphire substrates, which could be utilized as a BS for the high-order harmonics. Reflectance characteristics were also investigated at the same Brewster's angle using monochromatized synchrotron radiation (SR) located at Ultraviolet Synchrotron Radiation Facility (UVSOR), Institute for Molecular Science, Okazaki, Japan.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutaka Sanjo, Masaki Murata, Hiroshi Kumagai, Yasuo Nabekawa, Katsumi Midorikawa, and Masaya Chigane "Novel beam splitter for high-order harmonics with WO3/TiO2 bilayer grown on c-plane sapphire substrate by sequential surface chemical reactions", Proc. SPIE 8245, Synthesis and Photonics of Nanoscale Materials IX, 82450P (16 February 2012); https://doi.org/10.1117/12.909665
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KEYWORDS
Reflectivity

Sapphire

Titanium dioxide

Beam splitters

Chemical reactions

Reflection

Silicon carbide

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