Paper
20 February 2012 Nonlinear response of semiconductors driven by intense THz pulses
A. Pashkin, F. Junginger, C. Schmidt, B. Mayer, O. Schubert, S. Mährlein, R. Huber, A. Leitenstorfer
Author Affiliations +
Abstract
We present a review of our recent nonlinear spectroscopy experiments on bulk semiconductors performed using a novel source of ultra-intense multi-THz transients. The field-induced interband optical absorption in InP is studied on subcycle timescales. Our simulations corroborate the Franz-Keldysh effect as the main reason for the observed optical anomalies. The time-resolved four-wave mixing signals generated in InSb demonstrate clear signatures of a nonperturbative excitation regime and can be qualitatively reproduced by a simplified model of a two-level system driven far from the resonance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Pashkin, F. Junginger, C. Schmidt, B. Mayer, O. Schubert, S. Mährlein, R. Huber, and A. Leitenstorfer "Nonlinear response of semiconductors driven by intense THz pulses", Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 82600M (20 February 2012); https://doi.org/10.1117/12.910002
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Terahertz radiation

Semiconductors

Absorption

Spectroscopy

Transient nonlinear optics

Four wave mixing

Nonlinear response

Back to Top