Paper
27 February 2012 Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy
Pinar Dogan, Oliver Brandt, Christian Hauswald, Raffaella Calarco, Achim Trampert, Lutz Geelhaar, Henning Riechert
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Abstract
GaN nanowires are grown on Si(111) as templates for pendeoepitaxial coalescence overgrowth under different V/III ratios by molecular beam epitaxy. The degree of coalescence in the nanowire template increases with decreasing V/III ratio or doping with Mg. The morphology of the GaN nanowire template strongly influences that of the pendeoepitaxial layer after coalescence as well as its optical quality.
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Pinar Dogan, Oliver Brandt, Christian Hauswald, Raffaella Calarco, Achim Trampert, Lutz Geelhaar, and Henning Riechert "Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620P (27 February 2012); https://doi.org/10.1117/12.907817
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KEYWORDS
Gallium nitride

Nanowires

Magnesium

Molecular beam epitaxy

Scanning electron microscopy

Silicon

Doping

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