Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

Sungmin Huh; In-Yong Kang; Chang Young Jeong; Jihoon Na; Dong Ryul Lee; Hwan-seok Seo; Seong-Sue Kim; Chan-Uk Jeon; Jonggul Doh; Gregg Inderhees; Jinho Ahn

doi:10.1117/12.916021

22 March 2012 Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

Sungmin Huh, In-Yong Kang, Chang Young Jeong, Jihoon Na, Dong Ryul Lee, Hwan-seok Seo, Seong-Sue Kim, Chan-Uk Jeon, Jonggul Doh, Gregg Inderhees, Jinho Ahn

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83220K (2012) https://doi.org/10.1117/12.916021
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. Recently both blank suppliers achieved 1-digit number of defects at 60nm in size using their M1350s. In this paper, a full field EUV mask with Teron 61X blank inspection is fabricated to see the printability of various defects on the blank using NXE 3100. Minimum printable blank defect size is 23nm in SEVD using real blank defect. Current defect level on blank with Teron 61X Phasur has been up to 70 in 132 X 132mm². More defect reduction as well as advanced blank inspection tools to capture all printable defects should be prepared for HVM. 3.6X reduction of blank defects per year is required to achieve the requirement of HVM in the application of memory device with EUVL. Furthermore, blank defect mitigation and compensational repair techniques during mask process needs to be developed to achieve printable defect free on the wafer.

Citation Download Citation

Sungmin Huh, In-Yong Kang, Chang Young Jeong, Jihoon Na, Dong Ryul Lee, Hwan-seok Seo, Seong-Sue Kim, Chan-Uk Jeon, Jonggul Doh, Gregg Inderhees, and Jinho Ahn "Printability and inspectability of defects on EUV blank for 2xnm hp HVM application", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220K (22 March 2012); https://doi.org/10.1117/12.916021

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