Evolution of negative tone development photoresists for ArF lithography

Michael Reilly; Cecily Andes; Thomas Cardolaccia; Young Seok Kim; Jong Keun Park

doi:10.1117/12.916633

20 March 2012 Evolution of negative tone development photoresists for ArF lithography

Michael Reilly, Cecily Andes, Thomas Cardolaccia, Young Seok Kim, Jong Keun Park

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 832507 (2012) https://doi.org/10.1117/12.916633
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The negative tone development process enables the printing of dark field features on wafer using bright field masks with a manufacturing capability for back-end-of-line processing. The performance of NTD photoresist has advanced along two fronts: namely common process window for dense and semi-dense contacts and the resolution and line width roughness of isolated trenches. Furthermore, the chemistry has evolved by the convergence of capability for printing line/space and contact hole using a single photoresist formulation. The process performance of a series of NTD photoresist is reported. Particular focus is placed on process latitude, CDU, thickness control, LWR and resolution limit.

Citation Download Citation

Michael Reilly, Cecily Andes, Thomas Cardolaccia, Young Seok Kim, and Jong Keun Park "Evolution of negative tone development photoresists for ArF lithography", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832507 (20 March 2012); https://doi.org/10.1117/12.916633

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