Paper
25 January 2012 Hydrostatic pressure and electric field effect on electronic states in double quantum rings
H. M. Baghramyan, M. G. Barseghyan, C. A. Duque, A. A. Kirakosyan
Author Affiliations +
Proceedings Volume 8414, Photonics and Micro- and Nano-structured Materials 2011; 84140C (2012) https://doi.org/10.1117/12.923304
Event: Photonics and Micro- and Nano- structured Materials 2011, 2011, Yerevan, Armenia
Abstract
Using the effective mass approximation and the transfer matrix formalism, we have calculated the ground state energy of electron in 0.7 0.3 GaAs/Ga0.7Al0.3As concentric double quantum rings under the combined effects of electric field and hydrostatic pressure. The ground state energy dependences on the electric field, hydrostatic pressure and width of outer ring are reported for different values of the thickness of rings. We have found that for low pressure regime (less than P = 8.37 kbar ) the ground state energy decreases slower than for high pressure regime (higher then P = 8.37 kbar ). Additionally, we have found that the effect of hydrostatic pressure on ground state energy mainly depends on the electric field strength and the sizes of quantum ring.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. M. Baghramyan, M. G. Barseghyan, C. A. Duque, and A. A. Kirakosyan "Hydrostatic pressure and electric field effect on electronic states in double quantum rings", Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 84140C (25 January 2012); https://doi.org/10.1117/12.923304
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Aluminum

Magnetism

Bismuth

Heterojunctions

Bessel functions

Gallium

Semiconductors

Back to Top