Paper
13 September 2012 Electronic structure tuning of new fused thieno[3,2-b]thieno bisthiophene based polymers via alkyl chain and Group IV heteroatom modulation
Bob C. Schroeder, Hugo Bronstein, Raja Shahid Ashraf, Weimin Zhang, Zhenggang Huang, Pabitra Shakya Tuladhar, Thomas D. Anthopoulos, James R. Durrant, Iain McCulloch
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Abstract
Herein we present an extension of our work on indacenodithiophenes (IDT) by replacing the central benzene ring with a thieno(3,2-b) thiophene unit. This newly developed thieno[3,2-b]thieno bisthiophene (4T) donor moiety was synthesized from commercially available reagents and incorporated into a series of donor-acceptor polymers. We will discuss the pronounced donating character of 4T compared to IDT and the choice of bridging atom in those new polymers with an emphasis on field effect transistor and photovoltaic device performance.
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Bob C. Schroeder, Hugo Bronstein, Raja Shahid Ashraf, Weimin Zhang, Zhenggang Huang, Pabitra Shakya Tuladhar, Thomas D. Anthopoulos, James R. Durrant, and Iain McCulloch "Electronic structure tuning of new fused thieno[3,2-b]thieno bisthiophene based polymers via alkyl chain and Group IV heteroatom modulation", Proc. SPIE 8477, Organic Photovoltaics XIII, 847709 (13 September 2012); https://doi.org/10.1117/12.929622
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KEYWORDS
Polymers

Field effect transistors

Silicon

Solar energy

Chemical species

Organic photovoltaics

Photovoltaics

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