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We have developed the detached Bridgman process for growth of CdZnTe crystals. Detachment of the solidification
interface from the growth ampoule results in a low density of dislocations in the grown material and large single crystal
grains. The detached Bridgman process also provides for direct control of the melt composition close to the growth front,
allowing for accurate control of both the density of the Te/Cd precipitates as well as the majority carrier concentration in
the grown material. The influence of melt-composition control and compensation by shallow and deep donors on
detector performance is presented.
Shariar Motakef,Piotr Becla,Stacy Swider,Krzysztof Becla,John Fiala, andMatthew R. Overholt
"Growth of CdZnTe by the detached Bridgman method", Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070V (24 October 2012); https://doi.org/10.1117/12.946212
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Shariar Motakef, Piotr Becla, Stacy Swider, Krzysztof Becla, John Fiala, Matthew R. Overholt, "Growth of CdZnTe by the detached Bridgman method," Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070V (24 October 2012); https://doi.org/10.1117/12.946212