Paper
25 March 2013 Drift-diffusion modeling of InP-based triple junction solar cells
M. P. Lumb, M. González, C. G. Bailey, I. Vurgaftman, J. R. Meyer, J. Abell, M. Yakes, R. Hoheisel, J. G. Tischler, P. N. Stavrinou, M. Fuhrer, N. J. Ekins-Daukes, R. J. Walters
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Abstract
In this work, we use an analytical drift-diffusion model, coupled with detailed carrier transport and minority carrier lifetime estimates, to make realistic predictions of the conversion efficiency of InP-based triple junction cells. We evaluate the possible strategies for overcoming the problematic top cell for the triple junction, and make comparisons of the more realistic charge transport model with incumbent technologies grown on Ge or GaAs substrates.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. P. Lumb, M. González, C. G. Bailey, I. Vurgaftman, J. R. Meyer, J. Abell, M. Yakes, R. Hoheisel, J. G. Tischler, P. N. Stavrinou, M. Fuhrer, N. J. Ekins-Daukes, and R. J. Walters "Drift-diffusion modeling of InP-based triple junction solar cells", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201G (25 March 2013); https://doi.org/10.1117/12.2005332
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Cited by 14 scholarly publications.
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KEYWORDS
Solar cells

Sun

Analytical research

Coastal modeling

External quantum efficiency

Doping

Resistance

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