Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

N. Rahimi; A. A. Aragon; O. S. Romero; D. M. Kim; N. B. J. Traynor; T. J. Rotter; G. Balakrishnan; S. D. Mukherjee; L. F. Lester

doi:10.1117/12.2003392

25 March 2013 Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

N. Rahimi, A. A. Aragon, O. S. Romero, D. M. Kim, N. B. J. Traynor, T. J. Rotter, G. Balakrishnan, S. D. Mukherjee, L. F. Lester

Author Affiliations +

Proceedings Volume 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II; 86201K (2013) https://doi.org/10.1117/12.2003392
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm^-3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm² have been observed.

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N. Rahimi, A. A. Aragon, O. S. Romero, D. M. Kim, N. B. J. Traynor, T. J. Rotter, G. Balakrishnan, S. D. Mukherjee, and L. F. Lester "Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201K (25 March 2013); https://doi.org/10.1117/12.2003392

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