Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth

T. Yamaguchi; K. Wang; T. Araki; T. Honda; E. Yoon; Y. Nanishi

doi:10.1117/12.2007258

27 March 2013 Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth

T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862502 (2013) https://doi.org/10.1117/12.2007258
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

We proposed recently a new RF-MBE method called droplet elimination by radical-beam irradiation (DERI) for growing high-quality InN-based III-nitride films. DERI consists of two growth processes: a metal-rich growth process (MRGP) and a droplet elimination process (DEP). In InGaN growth, Ga was preferentially and selectively captured from the Ga/In wetting layer and droplets during MRGP. Then, excess In was swept out from the growing InGaN surface. The swept In was transformed to InN, epitaxially grown on top of InGaN during DEP using nitrogen radical beam irradiation. By repeating this process, an InN/InGaN MQW structure was successfully fabricated. Thick and uniform InGaN films were also successfully obtained by additionally irradiating the same Ga beam flux as that in MRGP even during DEP. When the irradiated Ga/N* beam flux ratio in DEP was changed from that in MRGP, an In_xGa_1-xN/In_yGa_1-yN MQW structure was successfully fabricated.

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T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, and Y. Nanishi "Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862502 (27 March 2013); https://doi.org/10.1117/12.2007258

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