Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann; Tim Fühner; Peter Evanschitzky; Jens Timo Neumann; Johannes Ruoff; Paul Gräupner

doi:10.1117/12.2011432

1 April 2013 Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, Paul Gräupner

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86791Q (2013) https://doi.org/10.1117/12.2011432
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

This paper investigates the performance of different mask options for sub-13 nm EUV-lithography with a 4x demagnification and an NA of 0.45. The considered mask options include standard binary masks, standard attenuated phase-shift masks, etched attenuated phase-shift masks and embedded-shifter phase-shift masks. The lithographic performance of these masks is investigated and optimized in terms of mask efficiency, NILS, DoF, OPC-performance and telecentricity errors. A multiobjective optimization technique is used to identify the most promising mask geometry parameters.

Citation Download Citation

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, and Paul Gräupner "Modeling studies on alternative EUV mask concepts for higher NA", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791Q (1 April 2013); https://doi.org/10.1117/12.2011432

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