LWR study on resist formulation parameters

Kyoungyoung Cho; Shinji Tarutani; Naoki Inoue; Hideaki Tsubaki; Mark Neisser

doi:10.1117/12.2011386

29 March 2013 LWR study on resist formulation parameters

Kyoungyoung Cho, Shinji Tarutani, Naoki Inoue, Hideaki Tsubaki, Mark Neisser

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 868217 (2013) https://doi.org/10.1117/12.2011386
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The influence of resist formulation parameters on line width roughness (LWR) and line edge roughness (LER) were studied systematically. Studied parameters were photoacid generator (PAG) loading, blended versus polymer bound PAG type, PEB temperature, molecular weight of polymer, quencher pKb, molecular size, hydrophobicity, and acid amplifier effect. We found an optimum PAG loading point and post-exposure bake (PEB) temperature. Blending and bound-PAG types gave a similar LWR number at the optimum loading, however, bound-PAG needed much larger dose to size. There was an optimum Mw, below which gave worse LWR, and above which required a larger dose to size. , It was difficult to see a difference of LWR for different types of quencher, however, there was a weak trend of better pattern profile with less basic quenchers. The resists that had acid amplifier in them gave a worse pattern profile and LWR number. From these studies, we found that optimization of PAG loading and quencher type are very important, and baking process optimization is also very important to obtain the best LWR number.

Citation Download Citation

Kyoungyoung Cho, Shinji Tarutani, Naoki Inoue, Hideaki Tsubaki, and Mark Neisser "LWR study on resist formulation parameters", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868217 (29 March 2013); https://doi.org/10.1117/12.2011386

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