Paper
3 January 2013 Copper germanium alloys formation by the low temperature atomic hydrogen treatment
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870005 (2013) https://doi.org/10.1117/12.2016882
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
The influence of atomic hydrogen treatment on two-layer thin-film Cu/Ge system deposited on i-GaAs substrate was investigated. It was established that the treatment in an atomic hydrogen flow with density 1015 at./(cm2•s) at a room temperature for 5 min results the solid state interdiffusion of Cu and Ge thin films and polycrystalline CuGe alloy formation with the vertically oriented grains.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artyom I. Kazimirov, Evgeny V. Erofeev, and Valery A. Kagadei "Copper germanium alloys formation by the low temperature atomic hydrogen treatment", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870005 (3 January 2013); https://doi.org/10.1117/12.2016882
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KEYWORDS
Hydrogen

Germanium

Copper

Thin films

Resistance

Annealing

Gallium arsenide

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