Paper
28 June 2013 Modeling of resist surface charging effect on EBM-8000 and its comparison with EBM-6000
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Abstract
In this paper, we report our modeling results of the resist surface charging effect on our newer e-beam mask writer EBM-8000. We show that our fundamental modeling scheme we have developed for EBM-6000 can be adapted on EBM-8000 platform without major modifications. We also discuss the significant differences in the charging effect between EBM-6000 and EBM-8000 in terms of its amplitude, its spatial distribution, and its dependency on the pattern density.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriaki Nakayamada, Takashi Kamikubo, Hirohito Anze, and Munehiro Ogasawara "Modeling of resist surface charging effect on EBM-8000 and its comparison with EBM-6000", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870102 (28 June 2013); https://doi.org/10.1117/12.2030095
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CITATIONS
Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Photomasks

Electron beam melting

Current controlled current source

Electron beam lithography

Electron beams

Metrology

Neon

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