Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers

Robert T. Hinkey; Hossein Lotfi; Lu Li; Hao Ye; Lin Lei; Rui Q. Yang; Joel C. Keay; Tetsuya D. Mishima; Michael B. Santos; Matthew B. Johnson

doi:10.1117/12.2024521

19 September 2013 Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers

Robert T. Hinkey, Hossein Lotfi, Lu Li, Hao Ye, Lin Lei, Rui Q. Yang, Joel C. Keay, Tetsuya D. Mishima, Michael B. Santos, Matthew B. Johnson

Author Affiliations +

Proceedings Volume 8868, Infrared Sensors, Devices, and Applications III; 886805 (2013) https://doi.org/10.1117/12.2024521
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

We present a study of the temperature-dependence of the performance metrics of a set of five GaSb-based MWIR interband cascade infrared photodetectors employing InAs/GaSb superlattice absorbers. The cutoff wavelengths of the detectors varied from 4.3 μm at 78 K to 5.1 μm at 300 K. In this study, the number of stages and absorber thicknesses were varied between the samples. Two of the samples were single-stage devices with long (> 1.0 μm) absorbers, while the other three were multiple-stage detectors with short (< 1.0 μm) absorbers. The detectors were designed so that the incoming signal was traveling in the same direction as the flow of the photo-excited electrons. We experimentally show that multiple-stage detectors with shorter absorbers are able to achieve higher values of R_oA and are have a photoresponse that is less sensitive to temperature. This confirms their potential utility for high-temperature detector operation. For the particular samples in this study, the multiple-stage devices were able to achieve better sensitivities above 250 K than the single-stage samples. It is notable that for most of the samples, a fit of the temperaturedependence of the dark current yielded an activation energy slightly larger than half the zero-temperature bandgap. This suggests that there may be an electric field and depletion region in the absorber and the interband transport in this series of detectors is governed by generation-recombination current, even at high temperature. Also, preliminary results of interband cascade infrared photodetectors at longer wavelengths (> 12 μm) are reported.

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Robert T. Hinkey, Hossein Lotfi, Lu Li, Hao Ye, Lin Lei, Rui Q. Yang, Joel C. Keay, Tetsuya D. Mishima, Michael B. Santos, and Matthew B. Johnson "Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 886805 (19 September 2013); https://doi.org/10.1117/12.2024521

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