Paper
23 August 2013 Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection
Kaisheng Liao, Ning Li, Xihui Liu, Liang Huang, Qiaoyu Zeng, Xiaohao Zhou, Zhifeng Li
Author Affiliations +
Proceedings Volume 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications; 890913 (2013) https://doi.org/10.1117/12.2034769
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
This paper reports the fabrication details of ion-implanted Si:P blocked-impurity band photodetectors with lateral structure. A set of performance data has been measured under the operating temperature of 5.5 K. The device exhibits good blocking characteristics with low dark current density under 10−4 A/cm2. Linear black-body response has been observed at small bias voltage (1 V) and low temperature (5.5 K) with the peak responsivity of 0.8 A/W. The photocurrent (PC) spectra show response peak at 27.3 μm and extend to 40 μm (~7.5 THz), which indirectly proves the feasibility of the preparation of Si:P BIB detectors using ion implantation. In addition, other small features in the PC spectra are designated to associate with the photothermal ionization and the silicon phonon absorption processes. Our work provides an alternative convenient approach to fabricate Si:P BIB detector for far-infrared and terahertz radiation detection.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaisheng Liao, Ning Li, Xihui Liu, Liang Huang, Qiaoyu Zeng, Xiaohao Zhou, and Zhifeng Li "Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection", Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 890913 (23 August 2013); https://doi.org/10.1117/12.2034769
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CITATIONS
Cited by 12 scholarly publications.
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KEYWORDS
Sensors

Infrared radiation

Silicon

Terahertz radiation

Ion implantation

Photodetectors

Millimeter wave sensors

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