Silver-free solar cell interconnection by laser spot welding of thin aluminum layers: analysis of process limits for ns- and µs-lasers

H. Schulte-Huxel; S. Blankemeyer; S. Kajari-Schröder; R. Brendel

doi:10.1117/12.2037628

6 March 2014 Silver-free solar cell interconnection by laser spot welding of thin aluminum layers: analysis of process limits for ns- and μs-lasers

H. Schulte-Huxel, S. Blankemeyer, S. Kajari-Schröder, R. Brendel

Author Affiliations +

Proceedings Volume 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX; 896716 (2014) https://doi.org/10.1117/12.2037628
Event: SPIE LASE, 2014, San Francisco, California, United States

Abstract

We investigate a laser welding process for contacting aluminum metallized crystalline silicon solar cells to a 10-μm-thick aluminum layers on a glass substrate. The reduction of the solar cell metallization thickness is analyzed with respect to laser induced damage using SiN_x passivated silicon wafers. Additionally, we measure the mechanical stress of the laser welds by perpendicular tear-off as well as the electrical contact resistance. We apply two types of laser processes; one uses one to eight 20-ns-laser pulses at 355 nm with fluences between 12 and 40 J/cm² and the other single 1.2-μs-laser pulses at 1064 nm with 33 to 73 J/cm². Ns laser pulses can contact down to 1-μm-thick aluminum layers on silicon without inducing laser damage to the silicon and lead to sufficient strong mechanical contact. In case of μs laser pulses the limiting thickness is 2 μm.

Citation Download Citation

H. Schulte-Huxel, S. Blankemeyer, S. Kajari-Schröder, and R. Brendel "Silver-free solar cell interconnection by laser spot welding of thin aluminum layers: analysis of process limits for ns- and μs-lasers", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX, 896716 (6 March 2014); https://doi.org/10.1117/12.2037628

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