Paper
27 March 2014 Inorganic resist materials based on zirconium phosphonate for atomic force microscope lithography
Mankyu Kang, Seonae Kim, JinHyuck Jung, Heebom Kim, Inkyun Shin, Chanuk Jeon, Haiwon Lee
Author Affiliations +
Abstract
New inorganic resist materials based on metal complexes were investigated for atomic force microscope (AFM) lithography. Phosphoric acids are good for self-assembly because of their strong binding energy. In this work, zirconium phosphonate system are newly synthesized for spin-coatable materials in aqueous solutions and leads to negative tone pattern for improving line edge roughness. Low electron exposure by AFM lithography could generate a pattern by electrochemical reaction and cross-linking of metal-oxo complexes. It has been reported that the minimum pattern results are affected by lithographic speed, and the applied voltage between a tip and a substrate.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mankyu Kang, Seonae Kim, JinHyuck Jung, Heebom Kim, Inkyun Shin, Chanuk Jeon, and Haiwon Lee "Inorganic resist materials based on zirconium phosphonate for atomic force microscope lithography", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511U (27 March 2014); https://doi.org/10.1117/12.2045641
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography

Zirconium

Atomic force microscopy

Metals

Coating

Image processing

Electron beam lithography

RELATED CONTENT


Back to Top